Wide-bandgap semiconductor platform (3C‑SiC‑on‑Si) and co‑packaged low‑loss Schottky diodes with GaN/IGBT switches that cut switching losses up to 50%, enable smaller magnetics, cooler operation, higher power density, and a path to SiC/MOSFET and CMOS integration. Targets manufacturers of data‑center power, electric-vehicle systems, and renewable-energy converters, delivering scalability, reliability, and improved product margins.